| 摘要 |
PURPOSE: A method for forming a dual damascene pattern is provided to increase process margin of photolithography and to reduce damage of an interlayer dielectric without using an etch stop layer. CONSTITUTION: An insulating layer(12), a hard mask and an anti-reflective layer are sequentially formed on a substrate(10) with a lower line(11). The anti-reflective layer, the hard mask and the insulating layer are etched by using the first photoresist pattern. The exposed anti-reflective layer and hard mask are selectively etched by using the second photoresist pattern. The remaining anti-reflective layer and photoresist pattern are removed. By etching the exposed insulating layer using the hard mask, a via hole(16) and a trench(18) are simultaneously formed. At this time, the hard mask is removed.
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