| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to reduce junction capacitance and to increase junction depletion by using a trench with a protrudent bottom. CONSTITUTION: A buffer oxide pattern and a nitride pattern with an opening part to expose an isolation region are stacked on a substrate(100). A protrudent oxide layer is filled in the opening part. The oxide layer is isotropic etched. By etching the oxide layer and the exposed substrate using the nitride pattern as a mask, a trench with a protrudent bottom is formed. An isolation layer(170) is formed by filling an insulating layer in the trench and planarizing.
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