METHOD FOR FORMING DEEP CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a deep contact hole of a semiconductor device is provided to be capable of preventing the bowing of etch profile. CONSTITUTION: An insulating layer(42) and a desired layer as a hard mask are sequentially formed on a conductive layer(41). By etching the desired layer and the insulating layer using a photoresist pattern, a hard mask pattern(43') and a contact hole forming region are formed, wherein the total etch thickness is 2000-10000Å. The photoresist pattern is removed. An etch stop layer(46) is formed on the resultant structure. A deep contact hole(47) is formed to expose the conductive layer by etching the insulating layer using the etch stop layer and the hard mask pattern.