| 摘要 |
A method of producing a semiconductor device, wherein after a trench is formed on a field region of a semiconductor substrate, an adsorption reaction of TEOS and a decomposition/recomposition reaction of TEOS using as a catalyst oxygen atoms decomposed from O3 are independently and repeatedly performed. As disclosed, the oxide layer can be buried in the trench with a fine width without generating voids therein, increasing electrical property of the semiconductor device.
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