Methods for forming interfacial layer for deposition of high-k dielectrics

摘要

Methods are provided for fabricating a transistor gate structure in a semiconductor device, comprising growing an interface oxide layer to a thickness of about 18 Å or less over a semiconductor body using an oxidant comprising N2O and hydrogen or NO and hydrogen at a temperature of about 800 degrees C. or more and a pressure of about 200 Torr or less. A high-k dielectric layer is formed over the interface oxide layer, and a gate contact layer is formed over the high-k dielectric layer. The gate contact layer, the high-k dielectric layer, and the interface oxide layer are then patterned to form a transistor gate structure.