| 摘要 |
PURPOSE: A method for forming a pad of a semiconductor device is provided to be capable of preventing residues and to effectively remove heat when etching a metal film for the pad. CONSTITUTION: An upper conductive layer(34) is formed on a semiconductor substrate. An interlayer dielectric(38) is formed on the resultant structure. By selectively etching the interlayer dielectric, a pad forming region is exposed. A metal film is formed on the exposed pad forming region. A pad(42) connected to the upper conductive layer and a dummy pattern(42a) are formed by etching the metal film.
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