METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a bridge from being generated between electrodes during a process for forming a storage node by forming storage nodes whose inlets are overlapped and by eliminating the overlapped inlets. CONSTITUTION: A mold insulation layer is formed on an insulation layer having a contact(14). A pattern for forming a storage node hole is formed on the mold insulation layer. The mold insulation layer is firstly etched by using the pattern to form an inlet of the storage node hole of a peanut type on the mold insulation layer. The mold insulation layer having the inlet of the storage node hole of a peanut type is secondly etched by using the pattern to form the storage node hole with the inlet of the storage node hole such that the storage node hole contacts the contact. A conductive material is filled in the storage node hole with the inlet of the storage node hole of the peanut type to form a storage node(18) overlapping adjacent inlets. The mold insulation layer remaining after the first and second etch processes is removed. A dielectric layer(20) and a plate electrode(22) are sequentially formed on the storage node overlapping the adjacent inlets. A portion of the resultant structure overlapping the inlets of adjacent storage nodes is eliminated.