Photo diode, opto-electronic integrated circuit device comprising the same, and method for manufacturing the same

摘要

Disclosed are a photo diode sensing a short-wavelength light in a blue band, an opto-electronic integrated circuit device comprising the photo diode, and a method of manufacturing the photo diode. The method for manufacturing the photo diode, comprising the steps of: preparing a silicon substrate; forming a first conductive impurity region at a first region on the silicon substrate; forming a second conductive impurity region at a second region on the silicon substrate, said second region being separated from the first region; and forming a porous silicon layer by chemically etching a surface of the second conductive impurity region.