发明名称 INTEGRATED CIRCUIT MODIFICATION USING WELL IMPLANTS
摘要 A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed having a well of a first conductivity type under the gate region being disposed adjacent to active regions of a first conductivity type. The well forming an electrical path between the active regions regardless of any reasonable voltage applied to the integrated circuit structure.
申请公布号 WO2004055868(A2) 申请公布日期 2004.07.01
申请号 WO2003US39594 申请日期 2003.12.10
申请人 HRL LABORATORIES, LLC;CHOW, LAP-WAI;CLARK, WILLIAM, M., JR.;BAUKUS, JAMES, P.;HARBISON, GAVIN, J. 发明人 CHOW, LAP-WAI;CLARK, WILLIAM, M., JR.;BAUKUS, JAMES, P.;HARBISON, GAVIN, J.
分类号 H01L21/8238;H01L27/02;H01L29/76 主分类号 H01L21/8238
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