METHOD FOR FABRICATING MEMORY WITH NANO DOT

摘要

PURPOSE: A method for fabricating a memory with a nano dot is provided to form a uniform distribution of high density nano dots for storing charges by performing a self-aligned process, and to obtain a high capacity memory of a high writing density capable of being written, recovered and erased by using the same principle of writing, recovering and erasing as a conventional memory. CONSTITUTION: The first insulation layer(102), a charge storage layer(103), a sacrificial layer and a metal layer are sequentially formed on a substrate(101) having a source/drain electrode. The metal layer is anodized to form a plurality of holes, and the sacrificial layer is oxidized. The oxidized metal layer is removed. The sacrificial layer and the charge storage layer are etched by using the oxidized sacrificial layer as a mask so that the charge storage layer is patterned to be a nano dot. The oxidized sacrificial layer is removed. The second insulation layer(109) and a gate electrode(111) are deposited on the patterned charge storage layer. The first insulation layer, the charge storage layer, the second insulation layer and the gate electrode are patterned to be a predetermined type.