| 摘要 |
A retaining member for a polishing head in a CMP apparatus comprises a bottom surface with silicon carbide. Due to the superior characteristics of silicon carbide, a low wear rate of the retaining member is secured, wherein, additionally, accumulation of electrostatic charges is substantially avoided due to the conductivity of silicon carbide. Consequently, cost of ownership is reduced, while at the same time process stability over a large number of substrates is increased.
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