发明名称 |
High performance EUV mask |
摘要 |
An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.
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申请公布号 |
US2004126670(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20020334175 |
申请日期 |
2002.12.28 |
申请人 |
LIANG SHOUDENG;YAN PEI-YANG;ZHANG GUOJING |
发明人 |
LIANG SHOUDENG;YAN PEI-YANG;ZHANG GUOJING |
分类号 |
G03C5/00;G03F1/08;G03F1/14;G03F9/00;G21K5/00;(IPC1-7):G03C5/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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