发明名称 CHEMICAL AMPLIFICATION TYPE SILICONE BASE POSITIVE PHOTORESIST COMPOSITION
摘要 <p>A chemical amplification type silicone base positive resist composition that can be produced from easily procurable compounds as raw materials through simple means and can provide a bilayer resist material from which fine pattern of high resolution, high aspect ratio, desirable sectional morphology and low line edge roughness can be formed. In particular, a chemical amplification type positive resist composition comprising alkali soluble resin (A) and photoacid generator (B) wherein a ladder type silicone copolymer comprising (hydroxyphenylalkyl)silsesquioxane units (a1), (alkoxyphenylalkyl)silsesquioxane units (a2) and alkyl- or phenylsilsesquioxane units (a3) is used as the alkali soluble resin (A). The copolymer wherein in the component (A), the units (a3) are phenylsilsesquioxane units is a novel compound.</p>
申请公布号 WO2004055598(A1) 申请公布日期 2004.07.01
申请号 WO2003JP15344 申请日期 2003.12.01
申请人 TOKYO OHKA KOGYO CO., LTD.;HIRAYAMA, TAKU;YAMADA, TOMOTAKA;KAWANA, DAISUKE;TAMURA, KOUKI;SATO, KAZUFUMI 发明人 HIRAYAMA, TAKU;YAMADA, TOMOTAKA;KAWANA, DAISUKE;TAMURA, KOUKI;SATO, KAZUFUMI
分类号 C08L83/06;C08G77/04;G03F7/004;G03F7/075;(IPC1-7):G03F7/11;C08G77/14;H01L21/027 主分类号 C08L83/06
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