| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to reduce a loss of a lower electrode caused by over-etch in an etch-back process by thickly depositing a nitride layer on the lower electrode and by using the nitride layer as an etch mask. CONSTITUTION: After an interlayer dielectric(100), a buffer oxide layer(101), an etch barrier layer and a cap oxide layer are sequentially deposited on a semiconductor substrate having a predetermined lower structure, a photolithography process is performed to form a contact hole. After the first polysilicon to be used as the lower electrode is deposited on the resultant structure having the contact hole, a nitride layer is deposited on the first polysilicon. After a photo process and a selective etch process are performed on the first polysilicon and the nitride layer, a wet oxide process using the etch barrier layer as a stop layer is performed to completely remove the cap oxide layer. The second polysilicon for the lower electrode is deposited on the resultant structure. An etch-back process using the nitride layer as an etch stop layer is performed to form the lower electrode. A wet etch process using the buffer oxide layer as an etch stop layer is performed to eliminate the nitride layer and the etch barrier layer. A dielectric layer(107) and an upper electrode are formed.
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