发明名称 |
Semiconductor trench structure |
摘要 |
A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of the trench as far as a boundary surface defines a collar region. In a second thermal process having a second maximum temperature that is not significantly higher than the first maximum temperature, a liner is deposited on the collar region and the boundary surface. The liner is removed from the boundary surface, thereby exposing the filler. The filler is then removed from a lower region of the trench.
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申请公布号 |
US2004126961(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030630373 |
申请日期 |
2003.07.30 |
申请人 |
BIRNER ALBERT;GOLDBACH MATTHIAS;HECHT THOMAS;HEINECK LARS;KUDELKA STEPHAN;LUTZEN JORN;MANGER DIRK;ORTH ANDREAS |
发明人 |
BIRNER ALBERT;GOLDBACH MATTHIAS;HECHT THOMAS;HEINECK LARS;KUDELKA STEPHAN;LUTZEN JORN;MANGER DIRK;ORTH ANDREAS |
分类号 |
H01L27/108;H01L21/00;H01L21/20;H01L21/334;H01L21/8242;H01L29/94;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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