| 摘要 |
Method and structure for passivating conductive material are disclosed. Atomic layer deposition of a thin passivation layer such as titanium nitride upon a conductive layer comprising a material such as copper, in the presence of a dielectric material not conducive to surface reaction with gaseous precursors used in the deposition schema, facilitates highly selective and accurate passivation which may improve electromigration performance, minimize leakage current to other conductive layers, and streamline process steps.
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