| 摘要 |
The present invention is related to a method for fabricating a capacitor capable of preventing a contact between neighboring lower electrodes even if a height of the lower electrode increases. The lower electrode is formed to have a critical dimension wider at a bottom region than at a top region to thereby be firmly supported. Also, a wider distance between the lower electrodes prevents neighboring lower electrodes from contacting to each other. As a result of these effects, it is possible to prevent a failure of dual bit, which eventually results in higher yields of semiconductor devices.
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