发明名称 |
Method for forming a micro pattern |
摘要 |
Disclosed is a method for forming a micro pattern. After a dual photoresist film having different glass transition temperatures is coated, an exposure process and a wet development process are implemented to form a dual photoresist film pattern. A RFP is then implemented for the dual photoresist film pattern. Therefore, it is possible to prohibit warpage of the photoresist film pattern. Accordingly, the uniformity of the critical dimension and a pattern shape could be improved. A good uniformity of the critical dimension and a good pattern shape in the etch process could be thus implemented.
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申请公布号 |
US2004127056(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030614182 |
申请日期 |
2003.07.08 |
申请人 |
KIM JONG HOON;KIM CHOI DONG |
发明人 |
KIM JONG HOON;KIM CHOI DONG |
分类号 |
H01L21/3065;H01L21/027;H01L21/302;H01L21/308;H01L21/311;H01L21/3213;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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