发明名称 Method for forming a micro pattern
摘要 Disclosed is a method for forming a micro pattern. After a dual photoresist film having different glass transition temperatures is coated, an exposure process and a wet development process are implemented to form a dual photoresist film pattern. A RFP is then implemented for the dual photoresist film pattern. Therefore, it is possible to prohibit warpage of the photoresist film pattern. Accordingly, the uniformity of the critical dimension and a pattern shape could be improved. A good uniformity of the critical dimension and a good pattern shape in the etch process could be thus implemented.
申请公布号 US2004127056(A1) 申请公布日期 2004.07.01
申请号 US20030614182 申请日期 2003.07.08
申请人 KIM JONG HOON;KIM CHOI DONG 发明人 KIM JONG HOON;KIM CHOI DONG
分类号 H01L21/3065;H01L21/027;H01L21/302;H01L21/308;H01L21/311;H01L21/3213;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 主分类号 H01L21/3065
代理机构 代理人
主权项
地址