发明名称 |
Alloy memory |
摘要 |
Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.
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申请公布号 |
US2004124408(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20020331700 |
申请日期 |
2002.12.28 |
申请人 |
HANNAH ERIC C.;BROWN MICHAEL A. |
发明人 |
HANNAH ERIC C.;BROWN MICHAEL A. |
分类号 |
G11B7/00;G11B9/00;G11B9/04;G11B9/10;G11C7/00;H01J37/305;H01L29/06;H01L29/12;(IPC1-7):H01L29/12 |
主分类号 |
G11B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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