| 摘要 |
A CMP slurry for a semiconductor device and a method for manufacturing the semiconductor device using the same, more specifically, a slurry including an additive having high affinity to a nitride film, and a method for polishing a complex film consisting of a polysilicon film and an oxide film or an oxide film using the same are described herein. When the complex film consisting of the polysilicon film and the oxide film removed by using the CMP slurry, a hard mask film which is the nitride film is not removed. Therefore, a polysilicon plug of the semiconductor device can be formed without exposing a word line electrode. In addition, when the oxide film is removed by using the CMP slurry, the slurry includes Al or SiO2 having spherical shaped particles as an abrasive, to form an STI type device isolation film which does not have scratches.
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