| 摘要 |
A tunable process for forming a barrier layer in an opening is provided. First, a dielectric layer is formed on a substrate. Second, an opening is formed in the dielectric layer. The opening has sidewalls and a bottom. Third, barrier layer material is deposited on the sidewalls and bottom of the opening. Fourth, sputter etching is used to remove barrier layer material from an overhang portion of the barrier layer and to redistribute barrier layer material removed from the overhang portion to the sidewalls. During the sputter etching step, the sputter etching may also remove barrier layer material from the bottom of the opening and redistributes barrier layer material removed from the bottom of the opening to the sidewalls. The sputter etching parameters may be selected to achieve a desired barrier layer configuration.
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