发明名称 |
Method for fabricating capacitor in semiconductor device |
摘要 |
A method for fabricating a capacitor of a semiconductor device for improving a capacitance and concurrently enhancing a leakage current characteristic and a breakdown voltage characteristic. The method includes the steps of: (a) forming a conductive silicon layer for a bottom electrode on a substrate; (b) nitridating the conductive silicon layer; (c) oxidizing the nitridated conductive silicon layer; (d) forming a silicon nitride layer on a surface of the oxidized layer; (e) forming a dielectric layer on the silicon nitride layer; and (f) forming a top electrode on the dielectric layer.
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申请公布号 |
US2004126964(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030635811 |
申请日期 |
2003.08.05 |
申请人 |
PARK JONG-BUM;OH HOON-JUNG;KIM KYONG-MIN |
发明人 |
PARK JONG-BUM;OH HOON-JUNG;KIM KYONG-MIN |
分类号 |
H01L27/108;H01L21/02;H01L21/20;H01L21/314;H01L21/321;H01L21/82;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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