发明名称 |
Method of fabricating capacitor with hafnium |
摘要 |
The present invention provides a method for fabricating a capacitor constituted with double hafnium oxide layers through a plasma enhanced chemical vapor deposition (PECVD) process and a low pressure chemical vapor deposition (LPCVD) process. The method for fabricating the capacitor constituted with the double hafnium oxide layers includes: forming a lower electrode layer over a semiconductor substrate; performing a heat treatment with the lower electrode; forming a first HfO2 layer over the first HfO2 layer by using a plasma enhanced chemical vapor deposition (PECVD) method; forming a second HfO2 layer over the first HfO2 layer by using a low pressure chemical vapor deposition (LPCVD) method; and performing a plasma treatment process at a high temperature; and forming an upper electrode over the second HfO2 layer.
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申请公布号 |
US2004126980(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030640908 |
申请日期 |
2003.08.13 |
申请人 |
KIM KYONG-MIN;LEE JONG-MIN;OH HOON-JUNG |
发明人 |
KIM KYONG-MIN;LEE JONG-MIN;OH HOON-JUNG |
分类号 |
C23C16/40;C23C16/56;H01L21/02;H01L21/316;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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