| 摘要 |
PURPOSE: A varactor device and a method for manufacturing the same are provided to improve frequency property and linearity by restraining the overlap between a gate and a source/drain. CONSTITUTION: A lightly doped n-type well region(32) is formed in a p-type substrate(31). A threshold voltage ion-implanted layer is formed in an active region defined by a field oxide layer(35) by counter doping. A gate electrode(36) is formed on the active region. A gate spacer(37) is formed at both sidewalls of the gate electrode. A source/drain region(38) is formed in the substrate. A bulk tab region(39) is formed in order to control the substrate bias of the lightly doped n-type well region.
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