发明名称 |
Widely wavelength tunable integrated semiconductor device and method for widely wavelength tuning semiconductor devices |
摘要 |
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.
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申请公布号 |
US2004125833(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030722277 |
申请日期 |
2003.11.25 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM;RIJKSUNIVERSITEIT GENT |
发明人 |
SARLET GERT;BUUS JENS;BAETS ROEL |
分类号 |
H01S3/10;H01S5/00;H01S5/0625;H01S5/10;H01S5/12;(IPC1-7):H01S3/10 |
主分类号 |
H01S3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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