| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to guarantee a characteristic of a semiconductor device and solve a problem occurring in patterning a gate electrode by omitting a pretreating ion implantation process performed on a gate electrode of an NMOS region before the gate electrode is patterned and by additionally performing an ion implantation process only on the gate electrode of the NMOS region after an NMOS gate electrode is patterned. CONSTITUTION: The NMOS gate electrode(110) and a PMOS gate electrode(112) are formed on a semiconductor substrate(100) in which the NMOS region and a PMOS region are defined. A barrier oxide layer is deposited along a step on the resultant structure. An ARC(anti-reflective coating) is formed on the resultant structure to cover the NMOS and PMOS gate electrodes. An etch process is performed to expose the upper part of the barrier oxide layer deposited on the NMOS and PMOS gate electrodes so that the ARC is etched. The barrier oxide layer deposited on the exposed NMOS gate electrode is etched to expose the upper part of the NMOS gate electrode by using a mask whose NMOS region only is open. An n¬+ ion implantation process is performed to implant n¬+ ions into the exposed NMOS gate electrode. After the ARC and the barrier oxide layer are removed, a source/drain ion implantation process is performed to form a source/drain region in the substrate exposed to both sides of the NMOS and PMOS gate electrodes.
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