发明名称 Deposition processes using Group 8 (VIII) metallocene precursors
摘要 Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C=O)Ca1Hb1Xc1; and Cp' is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1', where D1' is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=O)OCa1Hb1X1; or Ca2Hb2Xc2O(C=O)Ca1Hb1Xc1. D1 and D1' are different from one another. X is a halogen atom or N02; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1-c1; c1 is an integer between 0 and 2(a1)+1-b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1-c2; and c2 is an integer between 0 and 2(a2)+1-b2. The process can be used in manufacturing or processing electronic d
申请公布号 US2004126485(A1) 申请公布日期 2004.07.01
申请号 US20030685785 申请日期 2003.10.16
申请人 THOMPSON DAVID M.;HOOVER CYNTHIA A.;PECK JOHN D.;LITWIN MICHAEL M. 发明人 THOMPSON DAVID M.;HOOVER CYNTHIA A.;PECK JOHN D.;LITWIN MICHAEL M.
分类号 C23C16/18;C23C16/40;(IPC1-7):B05D5/12;C07F17/02 主分类号 C23C16/18
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