发明名称 |
Substrate processing method and substrate processing apparatus |
摘要 |
A processing chamber actually performs a heating process for a substrate. The processing chamber has an upper plate, a lower plate, and an exhaust opening. The upper plate heats a resist from a front surface of the substrate. The lower plate heats the resist from a rear surface of the substrate. The exhaust opening exhausts gas from the processing chamber. The upper plate is disposed in such a manner that it can be raised and lowered in the processing chamber by an upper air cylinder that composes an upper driving mechanism. The lower plate is disposed on a floor of the processing chamber. The exhaust opening is connected to a pump through a pipe. Heating temperature and heating time of the upper plate and the lower plate are controlled by a heating control portion. A pressure in the processing chamber is controlled by a pump. The pump is controlled by a pressure controlling portion.
|
申请公布号 |
US2004126713(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030735926 |
申请日期 |
2003.12.16 |
申请人 |
SHIRAISHI MASATOSHI;NAKAMA MASATSUGU;TAKAMORI HIDEYUKI |
发明人 |
SHIRAISHI MASATOSHI;NAKAMA MASATSUGU;TAKAMORI HIDEYUKI |
分类号 |
H01L21/027;G03F7/00;G03F7/16;G03F7/20;H01L21/00;(IPC1-7):G03F7/00 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|