发明名称 Substrate processing method and substrate processing apparatus
摘要 A processing chamber actually performs a heating process for a substrate. The processing chamber has an upper plate, a lower plate, and an exhaust opening. The upper plate heats a resist from a front surface of the substrate. The lower plate heats the resist from a rear surface of the substrate. The exhaust opening exhausts gas from the processing chamber. The upper plate is disposed in such a manner that it can be raised and lowered in the processing chamber by an upper air cylinder that composes an upper driving mechanism. The lower plate is disposed on a floor of the processing chamber. The exhaust opening is connected to a pump through a pipe. Heating temperature and heating time of the upper plate and the lower plate are controlled by a heating control portion. A pressure in the processing chamber is controlled by a pump. The pump is controlled by a pressure controlling portion.
申请公布号 US2004126713(A1) 申请公布日期 2004.07.01
申请号 US20030735926 申请日期 2003.12.16
申请人 SHIRAISHI MASATOSHI;NAKAMA MASATSUGU;TAKAMORI HIDEYUKI 发明人 SHIRAISHI MASATOSHI;NAKAMA MASATSUGU;TAKAMORI HIDEYUKI
分类号 H01L21/027;G03F7/00;G03F7/16;G03F7/20;H01L21/00;(IPC1-7):G03F7/00 主分类号 H01L21/027
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