BORON PHOSPHIDE-BASED SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF, LIGHT-EMITTING DIODE AND BORON PHOSPHIDE-BASED SEMICONDUCTOR LAYER

摘要

A boron phosphide-based semiconductor device enhanced in properties includes a substrate (11) composed of a {111}-Si single crystal having a surface of {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer (12) that is an aggregate of a plurality of triangular pyramidal single crystal entities (13) of the boron phosphide-based semiconductor crystal, wherein each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.