METHOD FOR MINIMIZING HUMP IN DEVICE WITH SHALLOW TRENCH ISOLATION STRUCTURE

摘要

PURPOSE: A method is provided to minimize the hump in a device with STI(Shallow Trench Isolation) structure by forming an HLD spacer before gate oxidation processing. CONSTITUTION: A pad pattern is formed on a silicon substrate(100) to expose an isolation region. An STI is formed by etching the exposed isolation region. A gap-fill oxide layer(104) is filled in the STI. The nitride pattern is removed. An HLD spacer(108) is formed at sidewalls of the STI. The first polysilicon layer(110) is formed on an active region(106) between the HLD spacers. The second polysilicon layer(114) is then formed on the first polysilicon layer.