METHOD FOR FORMING MIM CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an MIM(Metal/Insulator/Metal) capacitor of a semiconductor device is provided to improve process margin and flatness by simultaneously patterning a metal line and an electrode for the MIM capacitor. CONSTITUTION: A lower electrode forming substance, a dielectric substance and an upper electrode forming substance are sequentially deposited on a semiconductor substrate(31). An upper electrode is formed by selectively patterning the upper electrode forming substance. The dielectric film is formed by selectively etching the dielectric substance. An MIM capacitor(39) and a metal interconnection(38) are simultaneously formed by patterning the resultant structure using a photoresist pattern for defining a capacitor forming region and a metal interconnection forming region.