SEMICONDUCTOR MEMORY DEVICE CAPABLE OF IMPROVING CHARACTERISTICS OF TRCD TIME

摘要

PURPOSE: A semiconductor memory device is provided to improve the characteristics of RCD time(tRCD) by increasing a delay time until data is output after a read command. CONSTITUTION: A delay unit(200) outputs a signal including more than one delayed column address strobe pulse signal by delaying a column address strobe pulse signal generated by a read command. A NOR gate receives test mode switch flag signals capable of selecting one of signals being output from the delay unit. A switch unit selects one of the signals being output from the delay unit and then outputs it using one of an output of the NOR gate and the test mode switch flag signal and the first power supply voltage and the second power supply voltage as a control signal.