发明名称 |
Double-metal EUV mask absorber |
摘要 |
A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.
|
申请公布号 |
US2004124174(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20020334177 |
申请日期 |
2002.12.28 |
申请人 |
YAN PEI-YANG;MA HSING-CHIEN;CHEGWIDDEN SCOTT R. |
发明人 |
YAN PEI-YANG;MA HSING-CHIEN;CHEGWIDDEN SCOTT R. |
分类号 |
C03C17/36;(IPC1-7):C03C25/68 |
主分类号 |
C03C17/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|