Advanced recessed gate transistor and a method of forming the same

摘要

In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.