Production of an emitter with a good ohmic contact used in the production of e.g. a diode comprises introducing an emitter into a surface region of a semiconductor body by doping in three steps

摘要

Production of an emitter with a good ohmic contact to a metallic contact layer for a semiconductor component comprises introducing an emitter into a surface region of a semiconductor body (10) by doping in three steps, in which the last doping step is ion implantation. The defects formed by ion implantation weaken the emitter degree of action by raising the recombination rate and thus reducing the charge carrier service life and simultaneously deliver a further active doping.