Method for manufacturing silicon nanodot film for light emission

摘要

A method and apparatus for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 mu m as well as visible light range. <IMAGE>