| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a threshold voltage from varying by preventing an INWE(inverse narrow width effect) caused by a moat effect at the top corner of a STI(shallow trench isolation). CONSTITUTION: A pad oxide layer(201) and an organic ARC(anti-reflective coating)(202) are sequentially formed on a silicon substrate. A photoresist pattern(203) for defining a trench is formed on the organic ARC. The organic ARC and the pad oxide layer are selectively etched to expose a part of the silicon substrate by using the photoresist pattern. The trench is formed in the exposed silicon substrate. After the organic ARC and the photoresist pattern are eliminated, a gap-fill oxide layer is deposited to fill the inside of the trench. After a planarization process is performed by using the pad oxide layer as an etch stop layer, the pad oxide layer is eliminated.
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