发明名称 Semiconductor device and manufacturing method using the transfer technique
摘要 A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
申请公布号 EP1434264(A2) 申请公布日期 2004.06.30
申请号 EP20030029476 申请日期 2003.12.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUWABARA, HIDEAKI;TAKAYAMA, TORU;GOTO, YUUGO;MARUYAMA, JUNYA;OHNO, YUMIKO;YAMAZAKI, SHUNPEI
分类号 H01L21/68;H01L23/52;H01L21/20;H01L21/762;H01L21/98;H01L23/31;H01L25/065 主分类号 H01L21/68
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