发明名称 |
Solid-state image-sensing device and method for producing the same |
摘要 |
A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts. <IMAGE> |
申请公布号 |
EP1028470(A3) |
申请公布日期 |
2004.06.30 |
申请号 |
EP20000102659 |
申请日期 |
2000.02.08 |
申请人 |
SONY CORPORATION |
发明人 |
SUZUKI, RYOJI;UENO, TAKAHISA;SUMI, HIROFUMI;MABUCHI, KEIJI |
分类号 |
H01L27/146;H04N5/335;H04N5/341;H04N5/361;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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