| 摘要 |
PURPOSE: A passivation method of a semiconductor process is provided to prevent a defective device by guaranteeing an excellent gap-filling characteristic by an oxide layer in which SiH4 and H2O2 are used as a source, and to improve a signal delay phenomenon by using the oxide layer of a low dielectric constant. CONSTITUTION: A liner(34) is formed as a barrier material on a lower pattern. The oxide layer(36) in which SiH4 and H2O2 are used as a source is gap-filled in the liner. A capping layer is formed on the oxide layer. The barrier material is either one of an oxide-based or nitride-based material.
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