| 摘要 |
A semiconductor integrated circuit device includes a substrate (11), a nonvolatile memory device formed in a memory cell region of the substrate (11), and a semiconductor device formed in a device region of the substrate (11). The nonvolatile memory device has a multilayer gate electrode structure (16F) including a tunnel insulating film (12A) and a floating gate electrode (13A) formed thereon. The floating gate electrode (13A) has sidewall surfaces covered with a protection insulating film (18). The semiconductor device has a gate insulating film (12B, 12C) and a gate electrode (16) formed thereon. A bird's beak structure is formed of a thermal oxide film at an interface of the tunnel insulating film (12A) and the floating gate electrode (13A), the bird's beak structure penetrating into the floating gate electrode (13A) along the interface from the sidewall faces of the floating gate electrode (13A), and the gate insulating film (12B, 12C) is interposed between the substrate (11) and the gate electrode (16) to have a substantially uniform thickness. <IMAGE> |
