| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to reduce fabricating cost by decreasing the number of steps like a photolithography process, and to guarantee reliability by preventing the cause of generating particles in a photoresist material removing process. CONSTITUTION: A buffer layer and a material for a hard mask are deposited on a silicon substrate(100). A photolithography process is performed on the material for the hard mask and the buffer layer to pattern the hard mask. A trench of a predetermined depth is formed in the silicon substrate by using the hard mask. After a gap-fill oxide layer(103) is deposited to fill the inside of the trench, an ARC(anti-reflective coating)(105) is coated to perform the first planarization process. An etch-back process is performed on the resultant structure to perform the second planarization process. After the third planarization process is performed on the hard mask by a CMP(chemical mechanical polishing) process, the hard mask is eliminated.
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