METHOD FOR FORMING DUAL DAMASCENE PATTERN

摘要

PURPOSE: A method for forming a dual damascene pattern is provided to form a dual damascene pattern applicable to a semiconductor device with higher integration and higher performance by stably using a trench first method. CONSTITUTION: An interlayer dielectric(13), the first ARC(anti-reflective coating)(14) and a photoresist pattern for a trench(16) are formed on a substrate(10) having interconnections. The first ARC and the interlayer dielectric are partially etched to form a trench by using the photoresist pattern for the trench. The photoresist pattern for the trench is eliminated. The second ARC(17) is formed on the resultant structure including the trench and the first ARC. After a photoresist pattern for a via hole(19) is formed on the second ARC, a via hole to which the second ARC, the interlayer dielectric and the interconnection are exposed is formed.