发明名称 SEMICONDUCTOR INDUCTOR USING TRANSISTOR TO IMPROVE INTEGRATION DEGREE
摘要 PURPOSE: A semiconductor inductor with wideband frequency range is provided to improve integration degree by forming the inductor using a transistor. CONSTITUTION: A first and second transistors(Q1,Q2) are connected in series between a first port(P1) and a second port(P2). A gate node of the first transistor is connected to the second port, and a gate node of the second transistor is connected to the first port through a tuning resistor(Rt). The transconductance of the second transistor is higher than that of the first transistor.
申请公布号 KR100439734(B1) 申请公布日期 2004.06.30
申请号 KR19960075214 申请日期 1996.12.28
申请人 AGENCY FOR DEFENSE DEVELOPMENT;HYNIX SEMICONDUCTOR INC. 发明人 LEE, DUCK HYOUNG;KIM, SONG KANG;CHO, HYUN RYONG;LIM, SEUNG MOO;AHN, SUNG HYUN;WOO, BYUNG IL;CHEONG, HAE WON;JEONG, MYUNG DEUK;KIM, JONG MYUNG
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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