SEMICONDUCTOR INDUCTOR USING TRANSISTOR TO IMPROVE INTEGRATION DEGREE
摘要
PURPOSE: A semiconductor inductor with wideband frequency range is provided to improve integration degree by forming the inductor using a transistor. CONSTITUTION: A first and second transistors(Q1,Q2) are connected in series between a first port(P1) and a second port(P2). A gate node of the first transistor is connected to the second port, and a gate node of the second transistor is connected to the first port through a tuning resistor(Rt). The transconductance of the second transistor is higher than that of the first transistor.
申请公布号
KR100439734(B1)
申请公布日期
2004.06.30
申请号
KR19960075214
申请日期
1996.12.28
申请人
AGENCY FOR DEFENSE DEVELOPMENT;HYNIX SEMICONDUCTOR INC.
发明人
LEE, DUCK HYOUNG;KIM, SONG KANG;CHO, HYUN RYONG;LIM, SEUNG MOO;AHN, SUNG HYUN;WOO, BYUNG IL;CHEONG, HAE WON;JEONG, MYUNG DEUK;KIM, JONG MYUNG