| 摘要 |
A semiconductor wafer (W) and a polishing table (100) are rotated. The polishing table (100) has a polishing surface thereon. The semiconductor wafer (W) is pressed against the polishing surface on the polishing table (100) rotated at a first rotational speed to polish the semiconductor wafer (W). The semiconductor wafer (W) is separated from the polishing surface after the semiconductor wafer (W) is pressed against the polishing surface. Before the semiconductor wafer (W) is separated from the polishing surface, a rotational speed of the polishing table (100) is reduced to a second rotational speed lower than the first rotational speed to provide a difference between a rotational speed of the semiconductor wafer (W) and the rotational speed of the polishing table (100). |
