| 摘要 |
A composition for forming a ferroelectric thin film, a ferroelectric thin film formed using the composition, and a method for forming the thin film are provided. The composition includes a PZT sol-gel solution and a Bi2SiO5 sol-gel solution. The PZT sol-gel solution includes at least one of whole or partial hydrolysate of a lead (Pb) precursor and whole or partial hydrolyzed and polycondensated product of the Pb precursor; at least one of whole or partial hydrolysate of a zirconium (Zr) precursor, whole or partial hydrolyzed and polycondensated product of the Zr precursor, and a Zr complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and at least one of whole or partial hydrolysate of a titanium (Ti) precursor, whole or partial hydrolyzed and polycondensated product of the Ti precursor, and a Ti complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand. The Bi2SiO5 sol-gel solution includes at least one of whole or partial hydrolysate of silicon (Si) precursor and whole or partial hydrolyzed and polycondensated product of the Si precursor; and a resultant product obtained by refluxing triphenyl bismuth (Bi(Ph)3) or Bi(tmhd)3 a bismuth (Bi) precursor where tmhd is 2,2,6,6-tetramethylheptane-3,5-dionate, and C1-C10 alkoxyalcohol.
|
