A non-volatile memory device with improved sequential programming speed

摘要

A non-volatile memory device (103) suitable to be programmed in a sequential mode is proposed. The device includes a plurality of blocks of memory cells (121) each one for storing a word, each block being identified by an address, means (124) for loading an input address at the beginning of a programming procedure and means (136,142) for setting an internal address to the input address; the device further includes means (127) for loading a predetermined number of input words in succession, means (130-133) for latching a page consisting of the predetermined number of input words, means (145-157) for executing a programming operation including writing the page in the blocks identified by consecutive addresses starting from the internal address, and means (139,142) for incrementing the internal address of the predetermined number in response to the completion of the programming operation.