| 摘要 |
PURPOSE: An LCD element having an improved TFT is provided to apply a concavo-convex characteristic to a semiconductor layer of a TFT by forming a concavo-convex layer or a groove on a substrate, and to increase a surface area of the semiconductor layer, thereby increasing width of a channel formed on the semiconductor layer. CONSTITUTION: On the first substrate(120), at least one of concavo-convex layers(126a,126b) is formed. The concavo-convex layers(126a,126b) are made by etching accumulated insulating materials or metals. A gate electrode(112) is formed on the concavo-convex layers(126a,126b). The gate electrode(112) is made by accumulating metals by an evaporation method or a sputtering method. Concavo-convex surfaces are formed on the gate electrode(112). A gate insulating layer(122) is accumulated on the gate electrode(112). A semiconductor layer(114) is deposited on the gate insulating layer(122). A drain electrode(117) is deposited on the semiconductor layer(114).
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