发明名称 256 Meg dynamic random access memory
摘要 One aspect of the present invention relates to a voltage pump for an integrated circuit, comprising a plurality of voltage pump circuits operable in response to a clock signal input thereto, the plurality of voltage pump circuits being divided into a plurality of groups for operation in response to an enable signal produced by the integrated circuit in either separate or concurrent operating modes to achieve predetermined levels of power output, an oscillator circuit for producing the clock signal, first and second regulator circuits for producing first and second signals, respectively, for controlling the oscillator circuit, and a regulator select circuit for selecting one of the first and second signals for input to the oscillator. Other aspects and benefits of the invention are also described herein.
申请公布号 US6756836(B2) 申请公布日期 2004.06.29
申请号 US20020242330 申请日期 2002.09.12
申请人 MICRON TECHNOLOGY, INC. 发明人 KEETH BRENT;BUNKER LAYNE G.
分类号 G11C11/401;G11C5/02;G11C5/06;G11C11/407;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/8242;H01L27/108;(IPC1-7):G05F1/10 主分类号 G11C11/401
代理机构 代理人
主权项
地址