CMOS process with an integrated, high performance, silicide agglomeration fuse

摘要

A complementary metal oxide semiconductor (CMOS) fabrication process. The process comprises creating a polysilicon layer having a first thickness for a transistor gate area and a second thickness for a fuse area. The first thickness is greater than the second thickness, wherein most of the polysilicon in the fuse area will react with a metal layer to form polysilicide during a rapid thermal anneal (RTA) process.